bcv 29, bcv 49 1 sep-30-1999 npn silicon darlington transistors ? for general af applications ? high collector current ? high current gain ? complementary types: bcv 28, bcv 48 (pnp) 2 1 3 vps05162 2 type marking pin configuration package bcv 29 bcv 49 ef eg 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-89 sot-89 maximum ratings parameter symbol bcv 29 bcv 49 unit collector-emitter voltage v ceo 30 60 v collector-base voltage v cbo 40 80 emitter-base voltage v ebo 10 10 dc collector current i c 500 ma peak collector current i cm 800 base current 100 i b peak base current i bm 200 total power dissipation , t s = 130 c p tot 1 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 75 k/w junction - soldering point r thjs 20 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcv 29, bcv 49 2 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bcv 29 bcv 49 v (br)ceo 30 60 - - - - v collector-base breakdown voltage i c = 100 a, i b = 0 bcv 29 bcv 49 v (br)cbo 40 80 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 10 - - collector cutoff current v cb = 30 v, i e = 0 v cb = 60 v, i e = 0 bcv 29 bcv 49 i cbo - - - - 100 100 na collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c v cb = 60 v, i e = 0 , t a = 150 c bcv 29 bcv 49 i cbo - - - - 10 10 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 a, v ce = 1 v bcv 29 bcv 49 h fe 4000 2000 - - - - - dc current gain 1) i c = 10 ma, v ce = 5 v bcv 29 bcv 49 h fe 10000 4000 - - - - dc current gain 1) i c = 100 ma, v ce = 5 v bcv 29 bcv 49 h fe 20000 10000 - - - - dc current gain 1) i c = 0.5 a, v ce = 5 v bcv 29 bcv 49 h fe 4000 2000 - - - - 1) pulse test: t 300 s, d = 2%
bcv 29, bcv 49 3 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter saturation voltage1) i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 150 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3.5 - pf 1) pulse test: t 300 s, d = 2%
bcv 29, bcv 49 4 sep-30-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.4 0 50 100 150 bcv 29/49 ehp00317 ?c 0.6 0.2 t a s t 0.8 1.0 w 1.2 p tot t t ; as collector cutoff current i cbo = f ( t a ) v cb = v cemax 0 10 ehp00318 bcv 29/49 a t 150 0 4 10 cbo na 50 100 1 10 2 10 3 10 ? c max typ permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00319 bcv 29/49 -6 -5 10 0 10 s 0 10 2 10 5 5 10 -4 10 -3 10 -2 10 1 5 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 = d tot max tot p dc p p t t p = d t t p t transition frequency f t = f ( i c ) v ce = 5v 10 ehp00321 bcv 29/49 03 10 ma 1 10 3 10 5 10 1 10 2 10 2 c t f mhz
bcv 29, bcv 49 5 sep-30-1999 base-emitter saturation voltage i c = f ( v besat ), h fe = 1000 0 10 ehp00323 bcv 29/49 besat v 3.0 0 3 10 c ma 1.0 2.0 1 10 2 10 ? c v 5 5 150 25 ? c -50 ? c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 1000 0 10 ehp00322 bcv 29/49 cesat v 1.5 0 3 10 c ma 0.5 1.0 1 10 2 10 ? c v 5 5 150 25 ? c -50 ? c dc current gain h fe = f ( i c ) v ce = 5v 10 ehp00325 bcv 29/49 -1 3 10 ma 3 10 6 10 5 5 10 0 10 1 10 4 c fe h 2 10 5 10 ? c 125 5 25 ? c -55 ? c collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 10 ehp00324 bcv 29/49 -1 1 10 v 10 0 5 10 pf 0 eb0 vv cb0 cb0 c c eb0 () () eb0 c cb0 c
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